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Title:
LOW-TEMPERATURE SINTERING CONDUCTIVE PASTE, CONDUCTIVE FILM USING SAME, AND METHOD FOR FORMING CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2012/060284
Kind Code:
A1
Abstract:
When using a substrate having a low resistance to heat, it is preferred that heat treatment is performed at approximately 120°C which is a temperature in which the substrate does not become deformed. Moreover, if it is possible to achieve a low resistance regardless of the type of the resin used for the conductive paste, it will be possible to design a paste for different purposes, and the fields to which the paste could be applied will increase. Thus, provided is a conductive paste capable of forming a conductive film exhibiting a high conductivity even at a low temperature of approximately 120°C regardless of whether the constituting resin is a thermosetting resin or a thermoplastic resin. A method for forming a conductive film, wherein a conductive paste in which a C2-8 dicarboxylic acid is added to a paste comprising a resin, a dispersion medium, and silver nanoparticles covered with a C2-6 organic substance is used as the metallization paste.

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Inventors:
HINOTSU TAKASHI (JP)
HIYAMA YUTO (JP)
UEYAMA TOSHIHIKO (JP)
Application Number:
PCT/JP2011/074890
Publication Date:
May 10, 2012
Filing Date:
October 28, 2011
Export Citation:
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Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
HINOTSU TAKASHI (JP)
HIYAMA YUTO (JP)
UEYAMA TOSHIHIKO (JP)
International Classes:
H01B1/22; H01B1/00; H01B13/00; H05K1/09; H05K3/12
Foreign References:
JP2004265826A2004-09-24
JP2007095509A2007-04-12
JP2008166086A2008-07-17
JP2010132736A2010-06-17
JP2010153184A2010-07-08
JPH0594716A1993-04-16
JPH10162647A1998-06-19
JP2009298963A2009-12-24
JP2010132736A2010-06-17
JP2009298963A2009-12-24
JP2008166086A2008-07-17
JP2010153184A2010-07-08
Other References:
See also references of EP 2637175A4
Attorney, Agent or Firm:
HIROKOH, MASAKI (JP)
Hiroyuki Masaki (JP)
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