Title:
LOWER TEMPERATURE POLYCRYSTAL SILICON THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ORGANIC LIGHT-EMITTING DISPLAY
Document Type and Number:
WIPO Patent Application WO/2019/019268
Kind Code:
A1
Abstract:
Provided is a lower temperature polycrystal silicon thin-film transistor (10), comprising: a substrate (100); a polycrystal silicon layer (300) comprising an undoped layer (310), heavily-doped layers (330) and lightly-doped layers (320); a gate insulation layer (400) arranged on the polycrystal silicon layer (300) and comprising a first layer (410), second layers (420) and third layers (430) respectively opposite the undoped layer (310), the lightly-doped layers (320) and the heavily-doped layers (330), with the thickness of the second layers (420) being greater than the thickness of the first layer (410) and the third layers (430); a gate electrode (500) arranged on the first layer (410); an interlayer insulation layer (600) arranged on the gate electrode (500), the gate insulation layer (400) and the substrate (100); a first via hole (610) penetrating through the interlayer insulation layer (600) and one of the third layers (430); a second via hole (620) penetrating through the interlayer insulation layer (600) and the other one of the third layers (430); and a source electrode (700) and a drain electrode (800) arranged on the interlayer insulation layer (600) and respectively coming into contact with the corresponding heavily-doped layers (330) by means of the first via hole (610) and the second via hole (620). In addition, also provided are a method for manufacturing a lower temperature polycrystal silicon thin-film transistor (10), and an organic light-emitting display. The manufacturing process of the lower temperature polycrystal silicon thin-film transistor (10) is simple, and the manufacturing costs are relatively low.
Inventors:
LI SONGSHAN (CN)
Application Number:
PCT/CN2017/100585
Publication Date:
January 31, 2019
Filing Date:
September 05, 2017
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L29/786
Foreign References:
| US5767531A | 1998-06-16 | |||
| CN104347819A | 2015-02-11 | |||
| CN104485278A | 2015-04-01 | |||
| CN105097550A | 2015-11-25 | |||
| JP2005191212A | 2005-07-14 |
Attorney, Agent or Firm:
MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)
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