Title:
LPDDR SUBSTRATE DESIGN METHOD, LPDDR SUBSTRATE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/142746
Kind Code:
A1
Abstract:
Disclosed in the present invention are an LPDDR substrate design method, an LPDDR substrate and an electronic device. The LPDDR substrate design method comprises: determining a chip packaging area on an LPDDR substrate; and providing a first etching area and a second etching area respectively in adjacent areas at two ends of the chip packaging area, the first etching area and the second etching area both being used for providing a first plating lead, and the first plating lead being electrically connected to a circuit network to be plated on the LPDDR substrate. In the present design method, the etching areas for plating leads are concentrated, the inspection at a later stage is convenient, and there is almost no lead tail remaining, solving shortcomings caused by traditional substrate designs, and satisfying the requirements for performances and aesthetic of an LPDDR substrate.
Inventors:
LI HU (CN)
TAN SHAOPENG (CN)
TAN SHAOPENG (CN)
Application Number:
PCT/CN2020/072623
Publication Date:
July 22, 2021
Filing Date:
January 17, 2020
Export Citation:
Assignee:
SHENZHEN TECHWINSEMI TECH COMPANY LIMITED (CN)
International Classes:
H05K3/18
Foreign References:
| CN103178034A | 2013-06-26 | |||
| CN103165560A | 2013-06-19 | |||
| JP2007266492A | 2007-10-11 |
Attorney, Agent or Firm:
SHENZHEN DAOQINZHIKU INTELLECTUAL PROPERTY AGENCY (LLP) (CN)
Download PDF: