Title:
LUMINESCENT SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/1986/005925
Kind Code:
A1
Abstract:
A luminescent semiconductor element in which a thin film of a semiconductor or an insulating material is sandwiched with first and second semiconductor layers having a small forbidden band energy gap to form a heterostructure, which is further sandwiched with semiconductor layers having a forbidden band energy gap greater than those of the first and second semiconductor layers, in a manner that the electron-hole pairs formed via the thin film recombine together owing to the tunnel effect to produce laser oscillation. Means is further provided to control the probability of recombination by applying an electric field from the external side. Being constructed as described above, the semiconductor element produces the laser oscillation with a low threshold current maintaining a uniform wavelength and a uniform phase.
Inventors:
FUKUZAWA TADASHI (JP)
YAMADA EIZABURO (JP)
HIRUMA KENJI (JP)
MATSUMURA HIROYOSHI (JP)
YAMADA EIZABURO (JP)
HIRUMA KENJI (JP)
MATSUMURA HIROYOSHI (JP)
Application Number:
PCT/JP1986/000051
Publication Date:
October 09, 1986
Filing Date:
February 07, 1986
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01S5/00; H01S5/34; (IPC1-7): H01S3/18; H01L33/00
Foreign References:
| JPS515554B1 | 1976-02-20 |
Other References:
See also references of EP 0215125A4
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