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Title:
METHOD AND APPARATUS FOR GROWING Fe-Ga-BASED ALLOY SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2016/010039
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for growing a Fe-Ga-based alloy single crystal, whereby it becomes possible to produce a large crystal with a highly accurate chemical composition and a highly accurate crystal orientation and at low cost; and a single crystal. The method for growing a Fe-Ga-based alloy single crystal according to the present invention is characterized in that a crucible to be used is a double crucible composed of an outer crucible and an inner crucible arranged in the outer crucible, heating is done by means of a heating source arranged outside the outer crucible, and a single crystal is grown by bringing a seed crystal into contact with a raw material melt in the inner crucible and then pulling up the seed crystal.

Inventors:
FUKUDA, Tsuguo (6-3 Minami-Yoshinari 6-chome, Aoba-ku, Sendai-sh, Miyagi 04, 〒9893204, JP)
WATANABE, Kiyokazu (6-3 Minami-Yoshinari 6-chome, Aoba-ku, Sendai-sh, Miyagi 04, 〒9893204, JP)
NANTO, Toki (6-3 Minami-Yoshinari 6-chome, Aoba-ku, Sendai-sh, Miyagi 04, 〒9893204, JP)
SUZUKI, Shigeru (1-1 Katahira 2-chome, Aoba-ku, Sendai-sh, Miyagi 77, 〒9808577, JP)
UENO, Toshiyuki (Kakuma-machi Kanazawa-sh, Ishikawa 92, 〒9201192, JP)
Application Number:
JP2015/070165
Publication Date:
January 21, 2016
Filing Date:
July 14, 2015
Export Citation:
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Assignee:
FUKUDA CRYSTAL LABORATORY (6-3 Minami-Yoshinari 6-chome, Aoba-ku Sendai-sh, Miyagi 04, 〒9893204, JP)
International Classes:
C30B29/52; C30B15/10; F27B14/10; H01L41/47; C22C38/00; F27B14/04
Foreign References:
CN101275194A2008-10-01
CN1661735A2005-08-31
JPS6418986A1989-01-23
JP2001261481A2001-09-26
JPH06293588A1994-10-21
CN101086912A2007-12-12
Attorney, Agent or Firm:
FUKUMORI, Hisao (3rd Floor, Yano Building 5, Kandakonya-cho, Chiyoda-k, Tokyo 35, 〒1010035, JP)
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