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Title:
METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL FILM
Document Type and Number:
WIPO Patent Application WO/2010/024390
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a SiC single crystal film, wherein a SiC epitaxial film having a low doping concentration is stably grown on a substrate having a diameter of 2 inches or more by an LPE method wherein a SiC solution having a melt as a solvent is used.  The method includes, prior to introducing a melt material into a crystal growing furnace, a step of releasing air until the vacuum degree at a crystal growing temperature is 5×10-3 Pa or below, while heating inside the furnace.  Then, a crucible filled with the melt material is introduced into the furnace, the SiC solution is formed, and the SiC epitaxial film is grown on the substrate immersed in the solution.

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Inventors:
KUSUNOKI, Kazuhiko (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
楠　一彦 (〒41 大阪府大阪市中央区北浜４丁目５番３３号　住友金属工業株式会社内 Osaka, 〒5410041, JP)
KAMEI, Kazuhito (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
亀井　一人 (〒41 大阪府大阪市中央区北浜４丁目５番３３号　住友金属工業株式会社内 Osaka, 〒5410041, JP)
Application Number:
JP2009/065080
Publication Date:
March 04, 2010
Filing Date:
August 28, 2009
Export Citation:
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Assignee:
SUMITOMO METAL INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
住友金属工業株式会社 (〒41 大阪府大阪市中央区北浜４丁目５番３３号 Osaka, 〒5410041, JP)
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
三菱電機株式会社 (〒10 東京都千代田区丸の内二丁目７番３号 Tokyo, 〒1008310, JP)
KUSUNOKI, Kazuhiko (5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
楠　一彦 (〒41 大阪府大阪市中央区北浜４丁目５番３３号　住友金属工業株式会社内 Osaka, 〒5410041, JP)
International Classes:
C30B29/36; C30B19/02
Attorney, Agent or Firm:
HIROSE, Shoichi (Tozan Building, 4-2 Nihonbashi Honcho 4-chom, Chuo-ku Tokyo 23, 〒1030023, JP)
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