Title:
METHOD AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL, AND SEED SHAFT USED IN PRODUCTION OF SiC SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2018/062318
Kind Code:
A1
Abstract:
Provided is a production method with which it is possible to produce an SiC single crystal of high quality and high crystal thickness. A method for producing an SiC single crystal by a solution growth method in which the crystal growth plane (81) of a seed crystal (8) attached to the lower-end surface of a seed shaft is brought into contact with an Si-C solution (7) to grow an SiC single crystal, wherein the production method is provided with a step for heating and melting a raw material housed in a crucible (2) to produce an Si-C solution (7), and a step for bringing the crystal growth plane (81) into contact with the Si-C solution (7) and growing an SiC single crystal on the crystal growth plane (81). The seed shaft (6) has a surface layer gas permeability of 5 × 10-5m2/s or less in regions other than the region to which the seed crystal (8) is attached, at least in the region (61) between the lower end and a position 30 mm from the lower end.
Inventors:
KUSUNOKI KAZUHIKO (JP)
SEKI KAZUAKI (JP)
DAIKOKU HIRONORI (JP)
KADO MOTOHISA (JP)
DOI MASAYOSHI (JP)
SEKI KAZUAKI (JP)
DAIKOKU HIRONORI (JP)
KADO MOTOHISA (JP)
DOI MASAYOSHI (JP)
Application Number:
PCT/JP2017/035055
Publication Date:
April 05, 2018
Filing Date:
September 27, 2017
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
International Classes:
C30B29/36; C30B19/04
Foreign References:
| JP2013071870A | 2013-04-22 | |||
| JP2012501040A | 2012-01-12 |
Attorney, Agent or Firm:
UEBA Hidetoshi et al. (JP)
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