Title:
METHOD FOR CONTROLLING CONDUCTIVITY OF Ga2 O3 SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2005/078812
Kind Code:
A1
Abstract:
Disclosed is a method for controlling the conductivity of a Ga2O3 single crystal which enables to efficiently control the conductivity of a β-Ga2O3 single crystal. A light-emitting device comprises an n-type β-Ga2O3 substrate, and an n-type β-AlGaO3 cladding layer, an active layer, a p-type β-AlGaO3 cladding layer and a p-type β-Ga2O3 contact layer sequentially arranged on the n-type β-Ga2O3 substrate. By changing the Si concentration from 1 × 10-5 mol% to 1 mol%, the resistivity is controlled within the range from 2.0 × 10-3 &ohm cm to 8 × 102 &ohm cm and the carrier concentration is controlled within the range from 5.5 × 1015/cm3 to 2.0 × 1019/cm3.
Inventors:
ICHINOSE NOBORU (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
Application Number:
PCT/JP2005/000420
Publication Date:
August 25, 2005
Filing Date:
January 14, 2005
Export Citation:
Assignee:
UNIV WASEDA (JP)
ICHINOSE NOBORU (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
ICHINOSE NOBORU (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
International Classes:
C23C14/08; C23C14/28; C30B13/00; C30B29/16; H01L33/06; H01L33/30; H01L33/42; (IPC1-7): H01L33/00; C23C14/28; C30B29/16
Foreign References:
| US20030107098A1 | 2003-06-12 | |||
| US20040007708A1 | 2004-01-15 |
Other References:
HARWIG T. ET AL: "Electrical properties of beta-Ga2O3 single crystals. II", JOURNAL OF SOLID STATE CHEMISTRY, vol. 23, 15 January 1978 (1978-01-15), pages 205 - 211, XP002988246
HARWIG T. ET AL: "Electrical properties of beta-Ga2O3 single crystals.", SOLID STATE COMMUNICATIONS, vol. 18, 1976, pages 1223 - 1225, XP002988247
UEDA N. ET AL: "Synthesis and control of conductivity of ultraviolet transmitting beta-Ga2O3 single crystals", APPLIED PHYSICS LETTERS, vol. 70, no. 26, 30 June 1997 (1997-06-30), pages 3561 - 3563, XP000694835
TOMM Y. ET AL: "Floating zone growth of beta-Ga2O3 : a new window material for optoelectronic device applications", SOLAR ENERGY MATERIALS & SOLAR CELLS, vol. 66, February 2001 (2001-02-01), pages 369 - 374, XP004224698
FRANK J. ET AL: "Electrical Doping Of Gassensitive, Semiconducting Ga2O3 thin films", SENSORS AND ACTUATORS B, vol. 34, August 1996 (1996-08-01), pages 373 - 377, XP004078008
HARWIG T. ET AL: "Electrical properties of beta-Ga2O3 single crystals.", SOLID STATE COMMUNICATIONS, vol. 18, 1976, pages 1223 - 1225, XP002988247
UEDA N. ET AL: "Synthesis and control of conductivity of ultraviolet transmitting beta-Ga2O3 single crystals", APPLIED PHYSICS LETTERS, vol. 70, no. 26, 30 June 1997 (1997-06-30), pages 3561 - 3563, XP000694835
TOMM Y. ET AL: "Floating zone growth of beta-Ga2O3 : a new window material for optoelectronic device applications", SOLAR ENERGY MATERIALS & SOLAR CELLS, vol. 66, February 2001 (2001-02-01), pages 369 - 374, XP004224698
FRANK J. ET AL: "Electrical Doping Of Gassensitive, Semiconducting Ga2O3 thin films", SENSORS AND ACTUATORS B, vol. 34, August 1996 (1996-08-01), pages 373 - 377, XP004078008
Attorney, Agent or Firm:
Hirata, Tadao (World-Wide Center 1-13, Sanban-cho, Chiyoda-k, Tokyo, JP)
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