METHOD OF FABRICATING InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE

Title:

METHOD OF FABRICATING InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2006/108359

Kind Code:

A1

Abstract:

There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structure having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.

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Inventors:

JIANG FENGYI (CN)
FANG WENQING (CN)
WANG LI (CN)
MO CHUNLAN (CN)
LIU HECHU (CN)
ZHOU MAOXING (CN)

Application Number:

PCT/CN2006/000681

Publication Date:

October 19, 2006

Filing Date:

April 14, 2006

Export Citation:

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Assignee:

UNIV NANCHANG (CN)
JIANG FENGYI (CN)
FANG WENQING (CN)
WANG LI (CN)
MO CHUNLAN (CN)
LIU HECHU (CN)
ZHOU MAOXING (CN)

International Classes:

H01L33/32; H01L33/34

Foreign References:

JPH11274559A	1999-10-08
JPH11195813A	1999-07-21

Other References: