Title:
METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2007/105432
Kind Code:
A1
Abstract:
In a chamber (31) for storing a wafer (W), a Ti film is formed on the surface of the
wafer (W) arranged in the chamber (31) by discharging a processing gas including
a TiCl4 gas from a shower head (40) whose at least surface is composed
of a Ni containing material. The Ti film is formed on a prescribed number of wafers
(W) by setting the temperature of the shower head (40) at 300°C or higher
but lower than 450°C, and a TiCl4 gas flow quantity at 1-12mL/min(sccm)
or TiCl4 partial pressure at 0.1-2.5Pa. Then, ClF3 gas is
introduced into the chamber (31) by setting the temperature of the shower head
(40) at 200-300°C, and the inside of the chamber (31) is cleaned.
Inventors:
NARUSHIMA KENSAKU (JP)
WAKABAYASHI SATOSHI (JP)
TADA KUNIHIRO (JP)
WAKABAYASHI SATOSHI (JP)
TADA KUNIHIRO (JP)
Application Number:
PCT/JP2007/053152
Publication Date:
September 20, 2007
Filing Date:
February 21, 2007
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
NARUSHIMA KENSAKU (JP)
WAKABAYASHI SATOSHI (JP)
TADA KUNIHIRO (JP)
NARUSHIMA KENSAKU (JP)
WAKABAYASHI SATOSHI (JP)
TADA KUNIHIRO (JP)
International Classes:
C23C16/44; C23C16/14
Foreign References:
| JP2002155364A | 2002-05-31 | |||
| JP2005194540A | 2005-07-21 | |||
| JP2005248231A | 2005-09-15 | |||
| JP2003313666A | 2003-11-06 | |||
| JP2002526648A | 2002-08-20 | |||
| JP2001247968A | 2001-09-14 |
Attorney, Agent or Firm:
TAKAYAMA, Hiroshi (Akasaka 2-chome Minato-k, Tokyo 52, JP)
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