Title:
METHOD FOR MACHINING SiC MATERIAL
Document Type and Number:
WIPO Patent Application WO/2016/103977
Kind Code:
A1
Abstract:
The present invention is a method for machining a SiC material in which, after causing laser light to be absorbed by a SiC material surface to be cut to form multiple linear altered regions, the SiC material is cut along the surface to be cut. By forming multiple linear main altered regions (12) that extend in a prescribed direction side by side at a first pitch P1 to configure altered region groups (13) that extend in said prescribed direction and forming multiple altered region groups (13) side by side at a second pitch P2 that is longer than the first pitch P1, laser light irradiation time in machining of the SiC material is shortened while reliably developing cracks between the various lines.
Inventors:
YAMASHITA KENJI (JP)
NANIWAE KOICHI (JP)
NANIWAE KOICHI (JP)
Application Number:
PCT/JP2015/082171
Publication Date:
June 30, 2016
Filing Date:
November 16, 2015
Export Citation:
Assignee:
EL SEED CORP (JP)
International Classes:
B23K26/53; B23K26/00; B28D5/00; B28D5/04; H01L21/304
Foreign References:
| JP2013049161A | 2013-03-14 | |||
| JP2007142000A | 2007-06-07 | |||
| JP2004111946A | 2004-04-08 | |||
| US20080289165A1 | 2008-11-27 |
Attorney, Agent or Firm:
SHIGEIZUMI, Tatsushi (JP)
重泉 Tatsushi (JP)
重泉 Tatsushi (JP)
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