Title:
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2017/138516
Kind Code:
A1
Abstract:
To obtain an SiC single crystal in which admixture of heterogeneous polytypes is suppressed. This method for producing an SiC single crystal is provided with a step for preparing a seed crystal that has a growth surface in which one or more grooves have been formed (step S1), a solution generation step for heating and melting a raw material and generating an SiC solution (step S2), and a growth step for bringing the growth surface of the seed crystal into contact with the SiC solution and growing an SiC single crystal on the seed crystal (step S4). Each of the one or more grooves has a width of from 1 mm to less than 2 mm.
Inventors:
SEKI KAZUAKI (JP)
KUSUNOKI KAZUHIKO (JP)
DAIKOKU HIRONORI (JP)
KADO MOTOHISA (JP)
DOI MASAYOSHI (JP)
KUSUNOKI KAZUHIKO (JP)
DAIKOKU HIRONORI (JP)
KADO MOTOHISA (JP)
DOI MASAYOSHI (JP)
Application Number:
PCT/JP2017/004365
Publication Date:
August 17, 2017
Filing Date:
February 07, 2017
Export Citation:
Assignee:
NIPPON STEEL & SUMITOMO METAL CORP (JP)
TOYOTA MOTOR CO LTD (JP)
TOYOTA MOTOR CO LTD (JP)
International Classes:
C30B29/36; C30B19/12
Foreign References:
| JP2002121099A | 2002-04-23 | |||
| JP2006052097A | 2006-02-23 | |||
| JP2009292723A | 2009-12-17 | |||
| JP2015189626A | 2015-11-02 | |||
| JP2008290889A | 2008-12-04 |
Attorney, Agent or Firm:
UEBA, Hidetoshi et al. (JP)
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