Title:
METHOD FOR PRODUCING SiC WAFER, METHOD FOR PRODUCING SiC SEMICONDUCTOR, AND GRAPHITE-SILICON CARBIDE COMPOSITE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/006641
Kind Code:
A1
Abstract:
Provided is a method for producing an SiC wafer, said method comprising: a step of preparing a graphite-silicon carbide composite substrate that has a vitreous carbon layer on the surface of a graphite substrate and a CVD-SiC layer atop the vitreous carbon layer, and preparing a single-crystal SiC substrate that has on the surface an ion injection layer into which hydrogen ions have been injected; a joining step in which a joined body is obtained by bonding the CVD-SiC layer of the graphite-silicon carbide composite substrate and the ion injection layer of the single-crystal SiC substrate; a first separation step in which a single-crystal coated substrate is obtained by heating the joined body and separating the ion injection layer from the single-crystal SiC substrate; and a second separation step in which an SiC wafer is obtained by separating the vitreous carbon layer and CVD-SiC layer of the single-crystal coated substrate.
Inventors:
FURUICHI WATARU (JP)
OSADA JUNJI (JP)
MIZUMUKAI YUKI (JP)
OSADA JUNJI (JP)
MIZUMUKAI YUKI (JP)
Application Number:
PCT/JP2015/069703
Publication Date:
January 14, 2016
Filing Date:
July 08, 2015
Export Citation:
Assignee:
IBIDEN CO LTD (JP)
International Classes:
H01L21/02; H01L21/265
Foreign References:
| JP2009117533A | 2009-05-28 | |||
| JP2005005708A | 2005-01-06 | |||
| JPH10167830A | 1998-06-23 |
Attorney, Agent or Firm:
Eikoh Patent Firm, P. C. et al. (JP)
Patent business corporation glory patent firm (JP)
Patent business corporation glory patent firm (JP)
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