Title:
MAGNETIC FIELD DETECTION METHOD AND APPARATUS FOR INTEGRATED CIRCUIT AND DEFECT DETECTION METHOD AND APPARATUS FOR INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2023/155805
Kind Code:
A1
Abstract:
A magnetic field detection method and apparatus for an integrated circuit and a defect detection method and apparatus for an integrated circuit. The magnetic field detection method comprises: determining the microwave resonance frequency of an integrated circuit under test (S101); applying a voltage to the integrated circuit under test so as to enable said integrated circuit to be in a working state (S102); applying a microwave signal and a laser signal to a diamond NV center probe, the frequency of the microwave signal being the microwave resonance frequency, and the diamond NV center probe being arranged on one side of said integrated circuit (S103); acquiring a fluorescence signal generated by the diamond NV center probe (S104), and on the basis of the fluorescence signal, obtaining magnetic field information of said integrated circuit in the working state (S105); or by means of the diamond NV center probe, executing a test on said integrated circuit for a plurality of periods to obtain a plurality of magnetic signal charts, and on the basis of the plurality of magnetic signal charts, obtaining a magnetic field distribution condition of the surface of said integrated circuit, wherein in each test period, microwave signals having different microwave resonance frequencies are applied to the diamond NV center probe. The magnetic field detection method exhibits high detection efficiency and detection precision and good applicability in a magnetic field detection process.
Inventors:
SUN FENG (CN)
FANG YUAN (CN)
WAN CHUANQI (CN)
HE YU (CN)
XU KEBIAO (CN)
WU YA (CN)
ZHANG WEI (CN)
FANG YUAN (CN)
WAN CHUANQI (CN)
HE YU (CN)
XU KEBIAO (CN)
WU YA (CN)
ZHANG WEI (CN)
Application Number:
PCT/CN2023/076215
Publication Date:
August 24, 2023
Filing Date:
February 15, 2023
Export Citation:
Assignee:
CHINAINSTRU & QUANTUMTECH HEFEI CO LTD (CN)
International Classes:
G01N27/82; G01R33/12; G01R31/28
Domestic Patent References:
| WO2020080362A1 | 2020-04-23 |
Foreign References:
| CN114200363A | 2022-03-18 | |||
| US20210239779A1 | 2021-08-05 | |||
| CN109143121A | 2019-01-04 | |||
| CN107356820A | 2017-11-17 | |||
| CN112083364A | 2020-12-15 | |||
| US20190146045A1 | 2019-05-16 | |||
| CN109238505A | 2019-01-18 | |||
| CN113834801A | 2021-12-24 | |||
| US20150137793A1 | 2015-05-21 |
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC et al. (CN)
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