Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MAGNETIC MATERIAL SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/136962
Kind Code:
A1
Abstract:
This oxide-containing magnetic material sputtering target is characterized in that the average grain diameter of said oxides is 400nm or less. This method of manufacturing an oxide-containing magnetic material sputtering target involves depositing a magnetic material on a substrate by PCD or CVD, then removing the substrate from the deposited magnetic material, then crushing the same to obtain the raw material for the target, and further sintering said raw material. The purpose of the present invention is to obtain a magnetic material target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering, and in particular to obtain a strongly magnetic material sputtering target with dispersed non-magnetic material particles.

Inventors:
OGINO SHIN-ICHI (JP)
NAKAMURA YUICHIRO (JP)
Application Number:
PCT/JP2013/054849
Publication Date:
September 19, 2013
Filing Date:
February 26, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C22C1/05; C23C14/34; C22C5/04; C22C19/07; C22C32/00; C22C33/02; C22C38/00; G11B5/64; G11B5/851
Domestic Patent References:
WO2001068936A12001-09-20
WO2011070850A12011-06-16
WO2009054369A12009-04-30
WO2012029498A12012-03-08
WO2011089760A12011-07-28
Foreign References:
JPS5775414A1982-05-12
JP2004014613A2004-01-15
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Download PDF: