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Patent Searching and Data


Title:
MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR READING/WRITING DATA IN MAGNETIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2007/020823
Kind Code:
A1
Abstract:
Provided is a novel data write method for an MRAM, by which deterioration of a tunnel barrier layer can be suppressed. A magnetic memory cell (1) is provided with a magnetic recording layer (10), and a pin layer (30) connected to the magnetic recording layer (10) through a nonmagnetic layer (20). The magnetic recording layer (10) is provided with a magnetization switching area (13), a first magnetization fixed area (11) and a second magnetization fixed area (12). The magnetization switching area (13) is provided with switchable magnetization and faces the pin layer (30). The first magnetization fixed area (11) is connected to a first boundary (B1) of the magnetization switching area (13), and the direction of the magnetization is fixed in a first direction. The second magnetization fixed area (12) is connected to a second boundary (B2) of the magnetization switching area (13), and the direction of the magnetization is fixed in a second direction. Both the first direction and the second direction are directions toward the magnetization switching area (13) or directions to be away from the magnetization switching area (13).

Inventors:
NUMATA HIDEAKI (JP)
OHSHIMA NORIKAZU (JP)
SUZUKI TETSUHIRO (JP)
SUGIBAYASHI TADAHIKO (JP)
ISHIWATA NOBUYUKI (JP)
FUKAMI SHUNSUKE (JP)
Application Number:
PCT/JP2006/315528
Publication Date:
February 22, 2007
Filing Date:
August 04, 2006
Export Citation:
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Assignee:
NEC CORP (JP)
NUMATA HIDEAKI (JP)
OHSHIMA NORIKAZU (JP)
SUZUKI TETSUHIRO (JP)
SUGIBAYASHI TADAHIKO (JP)
ISHIWATA NOBUYUKI (JP)
FUKAMI SHUNSUKE (JP)
International Classes:
H01L43/08; G11C11/15; H01L21/8246; H01L27/105; H01L29/82
Foreign References:
JP2005191032A2005-07-14
JPH11195824A1999-07-21
JP2006073930A2006-03-16
JP2006270069A2006-10-05
Attorney, Agent or Firm:
KUDOH, Minoru (24-10, Minamiooi 6-chom, Shinagawa-ku Tokyo 13, JP)
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