MAGNETIC MEMORY DEVICE AND READ METHOD THEREOF

Title:

MAGNETIC MEMORY DEVICE AND READ METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2004/081943

Kind Code:

A1

Abstract:

There are provided a magnetic memory device and a read method thereof capable of performing read operation with a low power consumption and a high read accuracy. Sense bit lines (21A, 21B) are arranged in the bit string direction for each pair of magnetoresistive elements (12A, 12B) constituting a single storage cell (12) and supply read current. The read current which has flown in the pair of magnetoresistive elements (12A, 12B) flows via a sense word line (31) to the ground. Furthermore, a constant current circuit (108B) is arranged commonly for a plurality of sense word lines (31) so as to stabilize the sum of the pair of read currents flowing in the pair of magnetoresistive elements (12A, 12B) of each storage cell (12) and read out information from the storage cell (12) according to a difference between the pair of the read currents. By sharing the constant current circuit (108B), it is possible to reduce the irregularities of the sum of the pair of read currents and reduce the power consumption.

Inventors:

EZAKI JOICHIRO (JP)
KAKINUMA YUJI (JP)
KOGA KEIJI (JP)
SUMITA SHIGEKAZU (JP)

Application Number:

PCT/JP2004/003362

Publication Date:

September 23, 2004

Filing Date:

March 12, 2004

Export Citation:

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Assignee:

TDK CORP (JP)
EZAKI JOICHIRO (JP)
KAKINUMA YUJI (JP)
KOGA KEIJI (JP)
SUMITA SHIGEKAZU (JP)

International Classes:

G11C11/15; H01L21/8246; H01L27/105; H01L27/22; H01L43/08; (IPC1-7): G11C11/15; H01L27/10

Foreign References:

JP2002170374A	2002-06-14
JP2001236781A	2001-08-31
JP2002260377A	2002-09-13
JP2002298572A	2002-10-11
JP2003030976A	2003-01-31
JP2001273759A	2001-10-05
JP2002353415A	2002-12-06
JP2004119638A	2004-04-15

Other References: