Title:
MAGNETIC MEMORY ELEMENT AND DRIVING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2011/001746
Kind Code:
A1
Abstract:
Provided are a magnetic memory element which enables a reduction in current density at the time of switching without impairing the reliabilities of read endurance, retention performance, and so on, and a driving method therefor.
Specifically provided is a magnetic memory element which comprises a magnetic tunnel junction portion (20) having a spin-valve structure, and an in-plane magnetization film (17), and records information by applying an electric pulse, the magnetic tunnel junction portion being provided with a free layer (15) and a pinned layer (13) that are produced from a perpendicular magnetization film, and a nonmagnetic layer (14) sandwiched between the free layer (15) and the pinned layer (13). The in-plane magnetization film (17) exhibits an antiferromagnetic (low-temperature side)-ferromagnetic (high-temperature side) phase transition by temperature change based on the application of the electric pulse.
At the time of recording/erasing of information in the magnetic memory element, an electric pulse of a polarity corresponding to the recording/erasing of the information is applied to the magnetic tunnel junction portion (20) via the in-plane magnetization film (17), thereby setting the temperature of the in-plane magnetization film (17) to the transition temperature or higher. At the time of reading of information, an electric pulse of a polarity corresponding to the reading of the information is applied, thereby setting the temperature of the in-plane magnetization film (17) to the transition temperature or lower.
Inventors:
OGIMOTO, Yasushi (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 56, 〒2100856, JP)
Application Number:
JP2010/058165
Publication Date:
January 06, 2011
Filing Date:
May 14, 2010
Export Citation:
Assignee:
Fuji Electric Holdings Co., Ltd. (1-1 Tanabeshinden, Kawasaki-ku Kawasaki-sh, Kanagawa 56, 〒2100856, JP)
富士電機ホールディングス株式会社 (〒56 神奈川県川崎市川崎区田辺新田１番１号 Kanagawa, 〒2100856, JP)
富士電機ホールディングス株式会社 (〒56 神奈川県川崎市川崎区田辺新田１番１号 Kanagawa, 〒2100856, JP)
International Classes:
H01L21/8246; G11C11/15; H01F10/14; H01F10/32; H01L27/105; H01L43/08
Attorney, Agent or Firm:
OKUYAMA, Shoichi et al. (7th Floor, Akasaka Eight One Building 13-5, Nagata-cho 2-chome, Chiyoda-k, Tokyo 14, 〒1000014, JP)
Download PDF: