Title:
MAGNETIC MEMORY ELEMENT, INFORMATION PROCESSING SYSTEM, AND MEHOD FOR CONTROLLING MAGNETIC MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/234269
Kind Code:
A1
Abstract:
A magnetic memory element (100) comprises: a substrate (10); a spin Hall layer (12) which is stacked on the substrate (10) and is made of a material that exhibits the spin Hall effect (for example, a non-magnetic heavy metal) , the spin Hall layer (12) generating a spin flow when a write current Iwrite flows in an in-plane direction thereof; and an antiferromagnetic layer (14) which is stacked on the spin Hall layer (12), has a tensile strain ε in the in-plane direction, and is made of an antiferromagnetic metal including manganese (for example, Mn3Sn), wherein the magnetization of the antiferromagnetic metal can be inverted by a spin orbit torque produced by the spin flow.
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Inventors:
NAKATSUJI SATORU (JP)
HIGO TOMOYA (JP)
HIGO TOMOYA (JP)
Application Number:
PCT/JP2023/019977
Publication Date:
December 07, 2023
Filing Date:
May 29, 2023
Export Citation:
Assignee:
UNIV TOKYO (JP)
International Classes:
H10B61/00; H01L29/82; H10N50/10
Domestic Patent References:
| WO2017018391A1 | 2017-02-02 | |||
| WO2020166722A1 | 2020-08-20 |
Foreign References:
| US20200212291A1 | 2020-07-02 |
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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