MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY, AND METHOD FOR MANUFACTURING THE SAME

WIPO Patent Application WO/2011/118395

A1

Disclosed is a magnetic memory element provided with: a first magnetization free layer which is constructed from a ferromagnetic body having perpendicular magnetic anisotropy; a reference layer which is provided near the first magnetization free layer; a non-magnetic layer which is provided adjacent to the reference layer; and a step formation layer which is provided under the first magnetization free layer. The first magnetization free layer is provided with: a first magnetization fixed region which has magnetization fixed therein; a second magnetization fixed region which has magnetization fixed therein; and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region. The first magnetization free layer has at least one from among a step, a groove, and a projection.

FUKAMI Shunsuke (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
深見　俊輔 (〒01 東京都港区芝五丁目７番１号　日本電気株式会社内 Tokyo, 〒1088001, JP)
NAGAHARA Kiyokazu (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)

JP2011/055552

September 29, 2011

March 09, 2011

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NEC CORPORATION (7-1 Shiba 5-chome, Minato-ku Tokyo, 01, 〒1088001, JP)
日本電気株式会社 (〒01 東京都港区芝五丁目７番１号 Tokyo, 〒1088001, JP)
FUKAMI Shunsuke (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
深見　俊輔 (〒01 東京都港区芝五丁目７番１号　日本電気株式会社内 Tokyo, 〒1088001, JP)

H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L43/08

KUDOH Minoru (6F KADOYA BLDG, 24-10 Minamiooi 6-chome, Shinagawa-k, Tokyo 13, 〒1400013, JP)

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