MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

Title:

MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

Document Type and Number:

WIPO Patent Application WO/2010/074130

Kind Code:

A1

Abstract:

A magnetic memory cell includes a magnetic recording layer and a magnetic tunnel junction unit. The magnetic recording layer is a ferromagnetic layer having a vertical magnetic anisotropy. The magnetic tunnel junction unit is used for reading out information from the magnetic recording layer. The magnetic recording layer has two magnetic wall moving domains.

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Inventors:

NAGAHARA KIYOKAZU (JP)
FUKAMI SHUNSUKE (JP)
ISHIWATA NOBUYUKI (JP)
SUZUKI TETSUHIRO (JP)
OHSHIMA NORIKAZU (JP)

Application Number:

PCT/JP2009/071408

Publication Date:

July 01, 2010

Filing Date:

December 24, 2009

Export Citation:

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Assignee:

NEC CORP (JP)
NAGAHARA KIYOKAZU (JP)
FUKAMI SHUNSUKE (JP)
ISHIWATA NOBUYUKI (JP)
SUZUKI TETSUHIRO (JP)
OHSHIMA NORIKAZU (JP)

International Classes:

H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L43/08

Domestic Patent References:

WO2008047536A1

2008-04-24

Foreign References:

JP2008078650A	2008-04-03
JP2007288162A	2007-11-01
JP2006073930A	2006-03-16

Attorney, Agent or Firm:

KUDOH Minoru (JP)
Minoru Kudo (JP)

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