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Patent Searching and Data


Title:
MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2016/066053
Kind Code:
A1
Abstract:
A magnetic memory (1000) comprises a plurality of storage units (100) and row and column controllers (200, 300), wherein the storage unit comprises a U-shaped magnetic track (110), first and second switch units (20, 30) and a read-write device (80), wherein the U-shaped magnetic track (110) comprises first and second ports (11, 12) and first and second storage areas (111, 112), wherein the first and second storage areas (111, 112) are respectively located between first and second ends (13, 14) at the bottom of the first and second ports (11, 12) and the U-shaped magnetic track (110), and the first ports (11) in the same column receive a first drive voltage; the second ports (12) in the same column receive a second drive voltage; the row controller (200) connects the first and second switch units (20, 30) which are in the same column, so as to control the connection and disconnection thereof; the first and second switch units (20, 30) in the same column are further respectively connected to the second end (14) and the first end (13) at the bottom of the U-shaped magnetic track (110); the first and second switch units (20, 30) in the same column further receive a third drive voltage to drive a magnetic domain of a first or second storage area (111, 112) to move; and the read-write device (80) is used for executing a read operation or a write operation on the magnetic domain. Storage density can be improved and power consumption can be reduced.

Inventors:
LIN YINYIN (CN)
WEI ZHULIN (CN)
ZHAO JUNFENG (CN)
YANG WEI (CN)
FU YARONG (CN)
YANG KAI (CN)
Application Number:
PCT/CN2015/092579
Publication Date:
May 06, 2016
Filing Date:
October 22, 2015
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/02
Foreign References:
CN101763889A2010-06-30
CN101635166A2010-01-27
CN101847433A2010-09-29
CN102314927A2012-01-11
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