Title:
MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2017/159432
Kind Code:
A1
Abstract:
This magnetic memory is provided with: a plurality of magnetoresistance effect elements including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer configured to have a variable magnetization direction, and a non-magnetic layer disposed between the first ferromagnetic metal layer and the second ferromagnetic metal layer; a first wire connected to the first ferromagnetic metal layer of at least one of the magnetoresistance effect elements among the plurality of magnetoresistance effect elements; a plurality of spin orbit torque wires which are connected to the second ferromagnetic metal layer of each of the plurality of magnetoresistance effect elements, and which extend in a direction intersecting a stacked direction of the magnetoresistance effect elements; at least one first control element connected to the first wire; at least one second control element connected to a first connection point of each of the plurality of spin orbit torque wires; and a plurality of first cell selection elements each connected to a second connection point of each of the plurality of spin orbit torque wires.
Inventors:
SASAKI TOMOYUKI (JP)
Application Number:
PCT/JP2017/008801
Publication Date:
September 21, 2017
Filing Date:
March 06, 2017
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L21/8239; G11C11/16; G11C11/18; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| WO2015102739A2 | 2015-07-09 |
Foreign References:
| US20150036415A1 | 2015-02-05 | |||
| JP2015212996A | 2015-11-26 | |||
| JP2014179618A | 2014-09-25 |
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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