Title:
MAGNETIC RANDOM ACCESS MEMORY AND DEVICE, AND READ-WRITE CONTROL METHOD
Document Type and Number:
WIPO Patent Application WO/2022/021344
Kind Code:
A1
Abstract:
A magnetic random access memory and device, and a read-write control method. The magnetic random access memory comprises: a ferroelectric layer (110); a dielectric layer (120) provided above the ferroelectric layer (110); and a magnetic tunnel junction, wherein at least one part of the magnetic tunnel junction is provided on the dielectric layer (120). The present invention can significantly improve the interface effect of the dielectric layer (120) and the magnetic tunnel junction, thereby greatly improving a VCMA effect provided for the magnetic tunnel junction, and further optimizing the performance of the magnetic random access memory, such as power consumption, a writing speed, and thermal stability.
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Inventors:
ZHAO WEISHENG (CN)
LI ZHI (CN)
CAO KAIHUA (CN)
ZHANG KUN (CN)
LI ZHI (CN)
CAO KAIHUA (CN)
ZHANG KUN (CN)
Application Number:
PCT/CN2020/106252
Publication Date:
February 03, 2022
Filing Date:
July 31, 2020
Export Citation:
Assignee:
UNIV BEIHANG (CN)
International Classes:
G11C11/16; H01L43/08; H01L27/22
Foreign References:
| CN101834271A | 2010-09-15 | |||
| CN105374934A | 2016-03-02 |
Other References:
ZENG LANG, GAO TIANQI, ZHANG DEMING, PENG SHOUZHONG, WANG LEZHI, GONG FANGHUI, QIN XIAOWAN, LONG MINGZHI, ZHANG YOUGUANG, WANG KAN: "Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, USA, vol. 64, no. 12, 1 December 2017 (2017-12-01), USA, pages 4919 - 4927, XP055890376, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2761877
ZENG LANG, GAO TIANQI, ZHANG DEMING, PENG SHOUZHONG, GONG FANGHUI, QIN XIAOWAN, LONG MINGZHI, ZHANG YOUGUANG, ZHAO WEISHENG: "Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance", MESOSCALE AND NANOSCALE PHYSICS, 31 October 2016 (2016-10-31), XP055890377, Retrieved from the Internet [retrieved on 20220210]
ZENG LANG, GAO TIANQI, ZHANG DEMING, PENG SHOUZHONG, GONG FANGHUI, QIN XIAOWAN, LONG MINGZHI, ZHANG YOUGUANG, ZHAO WEISHENG: "Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance", MESOSCALE AND NANOSCALE PHYSICS, 31 October 2016 (2016-10-31), XP055890377, Retrieved from the Internet
Attorney, Agent or Firm:
BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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