MAGNETIC RANDOM ACCESS MEMORY, AND INITIALIZATION METHOD AND WRITING METHOD FOR MAGNETIC RANDOM ACCESS MEMORY

WIPO Patent Application WO/2010/004881

A1

A magnetic memory cell is provided with a magnetization recording layer (10), a first terminal (14a), a second terminal (14b), a magnetization fixed layer (30), and a nonmagnetic layer (32).  The magnetization recording layer (10) is a ferromagnetic layer with perpendicular magnetic anisotropy.  The first terminal (14a) is connected to one end of a first region (11) of the magnetization recording layer (10).  The second terminal (14b) is connected to the other end of the first region (11).  The nonmagnetic layer (32) is provided on the first region (11).  The magnetization fixed layer (30) is provided on the nonmagnetic layer (32) on the opposite side from the first region (11).  The magnetization recording layer (10) is provided with a first extended portion outside the first terminal (14a) of the magnetization recording layer (10), and a characteristic change structure (42, 44) is provided on the first extended portion for the purpose of substantially changing the magnetization reversal characteristic of the magnetization recording layer (10), which.

SUZUKI TETSUHIRO (JP)
FUKAMI SHUNSUKE (JP)
NAGAHARA KIYOKAZU (JP)
OHSHIMA NORIKAZU (JP)
ISHIWATA NOBUYUKI (JP)

PCT/JP2009/061679

January 14, 2010

June 26, 2009

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NEC CORP (JP)
SUZUKI TETSUHIRO (JP)
FUKAMI SHUNSUKE (JP)
NAGAHARA KIYOKAZU (JP)
OHSHIMA NORIKAZU (JP)
ISHIWATA NOBUYUKI (JP)

H01L21/8246; G11C11/15; H01L27/105; H01L43/08

WO2007119748A1	2007-10-25
WO2008047536A1	2008-04-24
WO2009093387A1	2009-07-30

JP2007103663A	2007-04-19
JP2006073960A	2006-03-16
JP2005150303A	2005-06-09

KUDOH Minoru (JP)
Minoru Kudo (JP)

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