MAGNETIC RANDOM ACCESS MEMORY

WIPO Patent Application WO/2006/104002

A1

An MRAM is provided with a first wiring, a second wiring and a memory cell. The first wiring extends in a first direction (S). The second wiring extends in a second direction. The memory cell includes a free magnetic layer, in which a plurality of anti-ferromagnetically coupled magnetic layers are laminated, and is disposed at a point where the first wiring and the second wiring intersect. The free magnetic layer has different axes of easy magnetization between the first direction and the second direction. The writing method includes the step (a) of reading first information stored in a memory cell (52), the step (b) of comparing second information to be written in the memory cell (52), with the first information, and the step (c) of changing, in case the first information and the second information are different, the direction (±T) of a first write current (I_WL) to be fed to the first wiring and the direction of a second write current to be fed to the second wiring, on the basis of the second information. Thus, the MRAM can widen the writing action area while suppressing the disturbance.

MIURA SADAHIKO (JP)
SUGIBAYASHI TADAHIKO (JP)
SUZUKI TETSUHIRO (JP)

PCT/JP2006/305789

October 05, 2006

March 23, 2006

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NEC CORP (JP)
MIURA SADAHIKO (JP)
SUGIBAYASHI TADAHIKO (JP)
SUZUKI TETSUHIRO (JP)

G11C11/15; H01L21/8246; H01L27/105; H01L43/08

US6545906B1	2003-04-08
JP2004086986A	2004-03-18
JP2003016779A	2003-01-17

Kudoh, Minoru (24-10 Minamiooi 6-chome, Shinagawa-k, Tokyo 13, JP)

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