MAGNETIC RECORDING ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC RANDOM ACCESS MEMORY

Title:

MAGNETIC RECORDING ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC RANDOM ACCESS MEMORY

Document Type and Number:

WIPO Patent Application WO/2010/032574

Kind Code:

A1

Abstract:

Provided is a nonvolatile memory of a low power consumption type using a electric field write-in magnetic recording element. A multiferroic layer (301) is arranged adjacent to a magnetic recording layer (2002). An electric field is applied to the multiferroic layer so as to control the dielectric state of the multiferroics, thereby controlling the magnetization direction of the magnetic recording layer for writing information. Read-out is performed by electrically detecting the magnetization direction of the magnetic recording layer by the magnetoresistance effect.

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Inventors:

HAYAKAWA Jun (Hitachi Ltd., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)

Application Number:

JP2009/064380

Publication Date:

March 25, 2010

Filing Date:

August 17, 2009

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Assignee:

HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)

International Classes:

H01L43/08; H01F10/16; H01F10/32; H01L21/8246; H01L27/105

Attorney, Agent or Firm:

HIRAKI Yusuke (Kamiya-cho MT Bldg. 19F, 3-20 Toranomon 4-chome, Minato-k, Tokyo 01, 〒1050001, JP)

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