Title:
MAGNETIC SENSOR AND HALL SENSOR, EACH USING ANOMALOUS HALL EFFECT, AND METHOD FOR MANUFACTURING HALL SENSOR
Document Type and Number:
WIPO Patent Application WO/2020/111862
Kind Code:
A1
Abstract:
A magnetic sensor using the anomalous Hall effect is disclosed. In order to form a Hall voltage corresponding to a change in the applied magnetic field, the magnetic sensor comprises a ferromagnetic material and non-magnetic metal layers placed on and under the ferromagnetic material. The linearity and saturation magnetization of the magnetic sensor depend on the thickness of the non-magnetic metal layers and the thickness of the ferromagnetic material. Further, a Hall sensor using the anomalous Hall effect is disclosed. The Hall sensor comprises a ferromagnetic layer and non-magnetic metal layers placed with respect to the ferromagnetic layer, and CoFeSiB which is the ferromagnetic layer has a thickness of 10Å to 45Å. Due to the interface-induced effect of the non-magnetic metal layers, a magnetization easy axis is formed in a direction perpendicular to the interface. Further, the Hall sensor has a rhombus-shaped sensing area, a line-shaped electrode wiring part, and a pad part which are formed by one patterning process.
Inventors:
KIM TAE WAN (KR)
Application Number:
PCT/KR2019/016704
Publication Date:
June 04, 2020
Filing Date:
November 29, 2019
Export Citation:
Assignee:
UNIV SEJONG IND ACAD COOP FOUD (KR)
NANOGATE (KR)
NANOGATE (KR)
International Classes:
G01R33/07; G01R33/00; H01L43/06
Foreign References:
| KR20150088074A | 2015-07-31 | |||
| KR20050084288A | 2005-08-26 | |||
| KR20110003773A | 2011-01-13 | |||
| US20040144995A1 | 2004-07-29 | |||
| KR20090060063A | 2009-06-11 |
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (KR)
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