Title:
MAGNETIC STORAGE DEVICE BASED ON SPIN ORBIT TORQUE, AND SOT-MRAM STORAGE UNIT
Document Type and Number:
WIPO Patent Application WO/2021/000747
Kind Code:
A1
Abstract:
Provided are a magnetic storage device based on a spin orbit torque, and an SOT-MRAM storage unit. The magnetic storage device comprises: a spin orbit torque supply line, a magnetic tunnel junction located on a surface of one side of the spin orbit torque supply line, and a dielectric layer located on a surface of the other side of the spin orbit torque supply line, wherein one side of a free layer of the magnetic tunnel junction is close to the spin orbit torque supply line, and the horizontal length of the spin orbit torque supply line is greater than the feature length of the magnetic tunnel junction; and the dielectric layer is provided, in the vertical direction, with a conductive hole penetrating through the dielectric layer, and the position of the conductive hole in the horizontal direction corresponds to the position of the magnetic tunnel junction, and the conductive hole is used for providing a conductive path vertical to the spin orbit torque supply line. According to the present invention, the read disturbance during a reading process can be reduced.
Inventors:
HE SHIKUN (CN)
YANG XIAOLEI (CN)
WANG MING (CN)
YANG XIAOLEI (CN)
WANG MING (CN)
Application Number:
PCT/CN2020/097094
Publication Date:
January 07, 2021
Filing Date:
June 19, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/02
Foreign References:
| CN109300495A | 2019-02-01 | |||
| CN108269915A | 2018-07-10 | |||
| CN103354952A | 2013-10-16 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
Download PDF:
Previous Patent: DISPLAY SCREEN ASSEMBLY, ANTENNA ASSEMBLY, AND ELECTRONIC APPARATUS
Next Patent: MAGNETIC TUNNEL JUNCTION
Next Patent: MAGNETIC TUNNEL JUNCTION