Title:
MAGNETIC TUNNEL JUNCTION DEVICE OF MAGNETIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/215610
Kind Code:
A1
Abstract:
A magnetic tunnel junction device of a magnetic random access memory, comprising a reference layer (13), a tunneling dielectric layer (14), and a memory layer (15) stacked in sequence from bottom to top, wherein the memory layer (15) is fabricated by a physical vapor deposition method and comprises a ferromagnetic material and a non-magnetic material which is mixed into the ferromagnetic material by means of a depositing layer insertion mode and/or a co-sputtering mode. Compared with the prior art, the memory layer (15) of the magnetic random access memory adopts more stack layers and smaller thickness of each layer or a co-sputtering method, or a method with the combination of both so as to achieve the more uniform mixing of the non-magnetic material into the magnetic material to gradually adjust the magnetization intensity, anisotropy intensity and Curie temperature of the memory layer (15); therefore, by means of the design of the memory layer (15), the current and power consumption required in overturning a magnetic moment of the memory layer (15) in a low temperature or a very low temperature can be reduced, so that the magnetic random access memory can work with low power consumption at a room temperature, a low temperature or a very low temperature.
More Like This:
Inventors:
YE LI (CN)
Application Number:
PCT/CN2019/109109
Publication Date:
October 29, 2020
Filing Date:
September 29, 2019
Export Citation:
Assignee:
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS (CN)
International Classes:
H01L43/00; G11B5/673; H01L39/22; H01L43/10; H01L43/12
Domestic Patent References:
| WO2018022385A1 | 2018-02-01 |
Foreign References:
| CN1938874A | 2007-03-28 | |||
| US20120280336A1 | 2012-11-08 | |||
| CN110112286A | 2019-08-09 | |||
| CN108232003A | 2018-06-29 | |||
| CN107946456A | 2018-04-20 | |||
| US20140177327A1 | 2014-06-26 |
Attorney, Agent or Firm:
SHANGHAI ZHI XIN PATENT AGENT LTD. et al. (CN)
Download PDF: