Title:
MAGNETIC TUNNEL JUNCTION DEVICE WITH AIR GAP
Document Type and Number:
WIPO Patent Application WO/2022/252918
Kind Code:
A1
Abstract:
A semiconductor device including a magnetic tunnel junction stack, a metallic hard mask aligned above the magnetic tunnel junction stack and an air gap surrounding the metallic hard mask. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, forming barrier on vertical side surfaces of the dielectric, and removing the dielectric between the metallic hard mask and the barrier. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, selectively removing a portion of the dielectric surrounding the metallic hard mark.
Inventors:
KOTHANDARAMAN CHANDRASEKHARAN (US)
MARCHACK NATHAN P (US)
HASHEMI POUYA (US)
MARCHACK NATHAN P (US)
HASHEMI POUYA (US)
Application Number:
PCT/CN2022/091542
Publication Date:
December 08, 2022
Filing Date:
May 07, 2022
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L43/00; H01L43/12
Foreign References:
| CN110061126A | 2019-07-26 | |||
| CN101304038A | 2008-11-12 | |||
| CN108886092A | 2018-11-23 | |||
| CN109524542A | 2019-03-26 | |||
| US8975089B1 | 2015-03-10 | |||
| CN110970553A | 2020-04-07 |
Attorney, Agent or Firm:
KING & WOOD MALLESONS (CN)
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