Title:
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2017/212895
Kind Code:
A1
Abstract:
[Problem] To provide a magnetic tunnel junction element and a magnetic memory that have having a higher MR ratio, and make it possible to prevent a recording layer from being damaged when a film is formed. [Solution] A reference layer 11 includes a ferromagnetic body, and the magnetization direction is fixed in the vertical direction. A barrier layer 12 includes a nonmagnetic body, the barrier layer 12 being disposed on one surface side of the reference layer 11. A recording layer 13 is disposed so as to sandwich the barrier layer 12 against the reference layer 11. The recording layer 13 has the following, in the stated order: a first ferromagnetic layer 21 that includes Co and/or Fe, the magnetization direction of the first ferromagnetic layer 21 being variable in the vertical direction; a first nonmagnetic layer 22 that includes at least one of Mg, MgO, C, Li, Al, and Si; a second nonmagnetic layer 23 that includes at least one of Ta, Hf, W, Mo, Nb, Zr, Y, Sc, Ti, V, and Cr; and a second ferromagnetic layer 24 that includes Co and/or Fe, the magnetization direction of the second ferromagnetic layer 24 being variable in the vertical direction.
Inventors:
HONJO HIROAKI (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
ENDOH TETSUO (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
ENDOH TETSUO (JP)
OHNO HIDEO (JP)
Application Number:
PCT/JP2017/018779
Publication Date:
December 14, 2017
Filing Date:
May 19, 2017
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L21/8239; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| WO2013153942A1 | 2013-10-17 |
Foreign References:
| JP2012064625A | 2012-03-29 | |||
| JP2014530503A | 2014-11-17 | |||
| JP2012235015A | 2012-11-29 | |||
| US9337415B1 | 2016-05-10 |
Attorney, Agent or Firm:
SUDA Atsushi et al. (JP)
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