MAGNETIC TUNNEL JUNCTION, MAGNETORESISTIVE RANDOM ACCESS MEMORY, CHIP, AND PREPARATION METHOD FOR MAGNETIC TUNNEL JUNCTION

WIPO Patent Application WO/2020/103000

A1

A preparation method for a magnetic tunnel junction (MTJ), and the MTJ and a magnetoresistive random access memory. The MTJ comprises: a fixed ferromagnetic layer (11), a free ferromagnetic layer (12), and a magnetic tunnel barrier (13) provided between the fixed ferromagnetic layer (11) and the free ferromagnetic layer (12); a side surface of the free ferromagnetic layer (12) and a surface opposite to the fixed ferromagnetic layer (11) is wrapped by means of the magnetic tunnel barrier (13), or, the magnetic tunnel barrier (13) covers a side surface of the fixed ferromagnetic layer (11) and a surface opposite to the free ferromagnetic layer (12), so that the free ferromagnetic layer (12) is more effectively separated from the fixed ferromagnetic layer (11), and the yield of the MTJ is improved. Furthermore, it is not necessary to form a vertical contour of the MTJ by using an ion or plasma etching method, the difficulty of preparation process is reduced, and the scalability of an MTJ array is improved.

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XU JEFFREY JUNHAO (CN)
ZHANG RIQING (CN)
YANG HUAN (CN)

PCT/CN2018/116552

May 28, 2020

November 20, 2018

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HUAWEI TECH CO LTD (CN)

G11C11/16

CN105322089A	2016-02-10
CN101960530A	2011-01-26
CN106783862A	2017-05-31
US20060098354A1	2006-05-11

SCIHEAD IP LAW FIRM (CN)

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