Title:
MAGNETIC TUNNELING JUNCTIONS WITH A MAGNETIC BARRIER
Document Type and Number:
WIPO Patent Application WO/2019/213663
Kind Code:
A8
Abstract:
Advanced magnetic tunneling junctions (MTJs) that dramatically reduce power consumption (switching energy, ESW) while maintaining a reasonably high tunneling magnetoresistance (on/off ratio, TMR) and strong thermal stability at room temperature are described herein. The MTJs include a magnetic insulator, such as an antiferromagnetic material, as the tunnel barrier. A more energy efficient switching in the MTJs is achieved by exchange bias switching (EB) due to the magnetoelectric effect (ME) or by magnon assisted switching.
Inventors:
WANG WEIGANG (US)
NEWHOUSE-ILLIGE TY (US)
ZHANG SHUFENG (US)
CHENG YIHONG (US)
XU MENG (US)
KHANAL PRAVIN (US)
NEWHOUSE-ILLIGE TY (US)
ZHANG SHUFENG (US)
CHENG YIHONG (US)
XU MENG (US)
KHANAL PRAVIN (US)
Application Number:
PCT/US2019/030932
Publication Date:
March 05, 2020
Filing Date:
May 06, 2019
Export Citation:
Assignee:
UNIV ARIZONA (US)
International Classes:
G11C11/16; G11C11/14; G11C11/22; H01L29/82; H01L43/02
Attorney, Agent or Firm:
NGUYEN, Quan (US)
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