Title:
MAGNETO-RESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR MANUFACTURING MAGNETO-RESISTIVE EFFECT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/134929
Kind Code:
A1
Abstract:
Provided are a magneto-resistive effect element which has a high thermal stability index Δ and in which the magnetization direction of a recording layer is vertical to a film surface, and a magnetic memory. Magnetic layers of the recording layer of the magneto-resistive effect element are divided into at least two, and these layers are stacked after changing the composition of Fe with respect to the sum total of the atomic fractions of magnetic elements in each of the magnetic layers.
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Inventors:
HONJO HIROAKI (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
OHNO HIDEO (JP)
ENDOH TETSUO (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
OHNO HIDEO (JP)
Application Number:
PCT/JP2017/001617
Publication Date:
July 26, 2018
Filing Date:
January 18, 2017
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L21/8246; H01L27/105
Domestic Patent References:
| WO2017010549A1 | 2017-01-19 |
Foreign References:
| JP2013016560A | 2013-01-24 | |||
| JP2015176933A | 2015-10-05 | |||
| JP2015176931A | 2015-10-05 | |||
| JP2015088520A | 2015-05-07 |
Attorney, Agent or Firm:
EICHI PATENT & TRADEMARK CORP. (JP)
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