Title:
MAGNETO-RESISTIVE RANDOM STORAGE UNIT, MEMORY, AND ACCESS METHOD
Document Type and Number:
WIPO Patent Application WO/2020/097872
Kind Code:
A1
Abstract:
A magneto-resistive random storage unit (20) and a magneto-resistive random memory, can improve the reading/writing speed of the memory. The magneto-resistive random storage unit (20) comprises: a fixed ferromagnetic layer (21) having a fixed magnetic torque; a free ferromagnetic layer (22) having a reversible magnetic torque; a magnetic tunnel potential barrier (23) located between the fixed ferromagnetic layer (21) and the free ferromagnetic layer (22) and comprising a double tunnel potential barrier quantum well formed by a first potential barrier layer (41), a conductive layer (43), and a second potential barrier layer (42).
Inventors:
XU JEFFREY JUNHAO (CN)
YANG HUAN (CN)
YANG HUAN (CN)
Application Number:
PCT/CN2018/115711
Publication Date:
May 22, 2020
Filing Date:
November 15, 2018
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN102683580A | 2012-09-19 | |||
| CN105449097A | 2016-03-30 | |||
| CN107221596A | 2017-09-29 | |||
| US20170345868A1 | 2017-11-30 |
Other References:
See also references of EP 3872879A4
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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