Title:
MAGNETORESISTANCE EFFECT DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/116655
Kind Code:
A1
Abstract:
A magnetoresistance effect device 100 is characterized by being provided with first magnetoresistance effect elements 101a, 101b, a second magnetoresistance effect element 101c, a first port 109a, a second port 109b, a signal line 107, and a DC application terminal 110, wherein: the first port 109a and the second port 109b are connected via the signal line 107; the first magnetoresistance effect elements 101a, 101b, and the second magnetoresistance effect element 101c are connected to the signal line 107 in parallel with respect to the second port 109b; the first magnetoresistance effect element 101a (101b) and the second magnetoresistance effect element 101c are formed such that the first magnetoresistance effect element 101a (101b) and the second magnetoresistance effect element 101c have inverse relations between directions of a DC current, which is inputted from the DC application terminal 110 and flows in the first magnetoresistance effect element 101a (101b) and also flows in the second magnetoresistance effect element 101c, and the respective arrangement orders of a magnetization fixed layer 102, a spacer layer 103, and a magnetization free layer 104; and the spin torque resonance frequency of the first magnetoresistance effect element 101a (101b) and the spin torque resonance frequency of the second magnetoresistance effect element 101c are different from each other.
Inventors:
URABE JUNICHIRO (JP)
SHIBATA TETSUYA (JP)
YAMANE TAKEKAZU (JP)
SUZUKI TSUYOSHI (JP)
SHIMURA ATSUSHI (JP)
SHIBATA TETSUYA (JP)
YAMANE TAKEKAZU (JP)
SUZUKI TSUYOSHI (JP)
SHIMURA ATSUSHI (JP)
Application Number:
PCT/JP2017/039665
Publication Date:
June 28, 2018
Filing Date:
November 02, 2017
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/82; G11B5/39; H01L43/08; H03B15/00
Domestic Patent References:
| WO2016175249A1 | 2016-11-03 | |||
| WO2015195122A1 | 2015-12-23 |
Foreign References:
| JP2016143701A | 2016-08-08 |
Other References:
KONISHI, K. ET AL.: "Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance", APPLIED PHYSICS LETTERS, vol. 102, 25 April 2013 (2013-04-25), pages 162409 - 1 -162409-4
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