MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

Title:

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

Document Type and Number:

WIPO Patent Application WO/2003/085750

Kind Code:

Abstract:

Reading characteristics, as well as writing characteristics, are improved by applying a more-novel-than-ever material to a ferromagnetic layer. A magnetoresistance effect element comprising a pair of ferromagnetic layers facing each other via an intermediate layer and being able to change reluctance by running current vertically to a film surface, wherein at least one of the ferromagnetic layers includes a ferromagnetic material containing Fe, Co and B. The ferromagnetic material preferably contain FeaCobNicBd (in the formula, a, b, c and d denote atomic %. 5≤a≤45, 35≤b≤85, 0

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Inventors:

HOSOMI MASANORI (JP)
MIZUGUCHI TETSUYA (JP)
OHBA KAZUHIRO (JP)
BESSHO KAZUHIRO (JP)
YAMAMOTO TETSUYA (JP)
KANO HIROSHI (JP)

Application Number:

PCT/JP2003/004461

Publication Date:

October 16, 2003

Filing Date:

April 08, 2003

Export Citation:

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Assignee:

SONY CORP (JP)
HOSOMI MASANORI (JP)
MIZUGUCHI TETSUYA (JP)
OHBA KAZUHIRO (JP)
BESSHO KAZUHIRO (JP)
YAMAMOTO TETSUYA (JP)
KANO HIROSHI (JP)

International Classes:

B21D1/12; G01R33/09; G11C11/15; H01F10/16; H01F10/187; B60S5/00; H01F10/30; H01F10/32; H01L21/8246; H01L27/105; H01L27/22; H01L43/08; H01L43/10; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; H01L27/105

Foreign References:

EP0959475A2	1999-11-24
JP2000101164A	2000-04-07
US20020036876A1	2002-03-28
US20020034055A1	2002-03-21
EP1031592A2	2000-08-30
JP2003060258A	2003-02-28
JP2003133614A	2003-05-09
EP1061592A2	2000-12-20

Other References: