MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME

Title:

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME

Document Type and Number:

WIPO Patent Application WO/2010/067520

Kind Code:

A1

Abstract:

Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.

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Inventors:

HAYAKAWA, Jun (HITACHI LTD., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)
早川純 (〒95 埼玉県比企郡鳩山町赤沼２５２０番地株式会社日立製作所基礎研究所内 Saitama, 〒3500395, JP)

Application Number:

JP2009/006122

Publication Date:

June 17, 2010

Filing Date:

November 16, 2009

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Assignee:

HITACHI, LTD. (6-6 Marunouchi 1-chome, Chiyoda-ku Tokyo, 80, 〒1008280, JP)
株式会社日立製作所 (〒80 東京都千代田区丸の内一丁目６番６号 Tokyo, 〒1008280, JP)
HAYAKAWA, Jun (HITACHI LTD., 2520, Akanuma, Hatoyama-machi, Hiki-gu, Saitama 95, 〒3500395, JP)

International Classes:

H01L43/10; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L29/82; H01L43/08

Attorney, Agent or Firm:

Polaire I.P.C. (7-1Hatchobori 2-chome, Chuo-ku Tokyo, 32, 〒1040032, JP)

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