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Title:
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2011/152281
Kind Code:
A1
Abstract:
Disclosed are a magnetoresistance effect element, the direction of magnetization whereof is stable in the direction that is perpendicular to the film plane, magnetoresistance change rates therein are controlled, and writing thereto by domain wall motion is possible; and a magnetic memory employing the magnetoresistance effect element. Magnetoresistance change rates are controlled by configuring a ferroelectric layer material that configures a magnetoresistance effect element with either a ferromagnetic material or a heusler alloy, including at least one type of 3d transition metal. Also, the magnetism direction is changed from the in-plane direction of the film to the direction that is perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer at the atomic layer level.

Inventors:
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
MATSUKURA FUMIHIRO (JP)
ENDOH MASAKI (JP)
KANAI SHUN (JP)
MIURA KATSUYA (JP)
YAMAMOTO HIROYUKI (JP)
Application Number:
PCT/JP2011/062119
Publication Date:
December 08, 2011
Filing Date:
May 26, 2011
Export Citation:
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Assignee:
HITACHI LTD (JP)
UNIV TOHOKU (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
MATSUKURA FUMIHIRO (JP)
ENDOH MASAKI (JP)
KANAI SHUN (JP)
MIURA KATSUYA (JP)
YAMAMOTO HIROYUKI (JP)
International Classes:
H01L43/08; H01L21/8246; H01L27/105
Domestic Patent References:
WO2009001706A12008-12-31
WO2009019949A12009-02-12
Other References:
M.ENDO ET AL.: "Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures", APPLIED PHYSICS LETTERS, vol. 96, no. 1-3, 27 May 2010 (2010-05-27), pages 212503
Attorney, Agent or Firm:
HIRAKI Yusuke et al. (JP)
Yusuke Hiraki (JP)
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Claims: