MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

WIPO Patent Application WO/2011/152400

A1

Disclosed are a magnetoresistance effect element, the direction of magnetization whereof is stable in the direction that is perpendicular to the film plane, and magnetoresistance change rates therein are controlled; and a magnetic memory employing the magnetoresistance effect element. By configuring a ferromagnetic layer (106, 107) material, which configures the magnetoresistance effect element, with a ferromagnetic material including at least one type of 3d transition metal, the rate of change of magnetoresistance is controlled, and the direction of magnetization is changed from the in-plane direction of the film to the direction that is perpendicular to the film plane by controlling the ferromagnetic layer film thickness at the atomic layer level.

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OHNO HIDEO (JP)
IKEDA SHOJI (JP)
MATSUKURA FUMIHIRO (JP)
ENDOH MASAKI (JP)
KANAI SHUN (JP)
YAMAMOTO HIROYUKI (JP)
MIURA KATSUYA (JP)

PCT/JP2011/062493

December 08, 2011

May 31, 2011

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HITACHI LTD (JP)
UNIV TOHOKU (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
MATSUKURA FUMIHIRO (JP)
ENDOH MASAKI (JP)
KANAI SHUN (JP)
YAMAMOTO HIROYUKI (JP)
MIURA KATSUYA (JP)

H01L43/08; H01L21/8246; H01L27/105

JP2009081315A	2009-04-16
JP2007142364A	2007-06-07

M.ENDO ET AL.: "Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co4oFe4oB2o/Ta structures", APPLIED PHYSICS LETTERS, vol. 96, 27 May 2010 (2010-05-27), pages 212503-1 - 212503-3

HIRAKI Yusuke et al. (JP)
Yusuke Hiraki (JP)

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