Title:
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/021468
Kind Code:
A1
Abstract:
A magnetoresistance effect element (100) is provided with a heavy metal layer (11) composed of a heavy metal and shaped so as to extend in a first direction, a recording layer (12) composed of a ferromagnetic material and provided adjacent to the heavy metal layer (11), a barrier layer (13) composed of an insulating material and provided on the recording layer (12) on the surface on the opposite side from the heavy metal layer (11), and a reference layer (14) composed of a ferromagnetic material and provided adjacent to the surface of the barrier layer (13) on the opposite side from the recording layer (12). The direction of magnetization of the reference layer (14) has a component that is substantially fixed in the first direction, and the direction of magnetization of the recording layer (12) has a component that is variable in relation to the first direction. The magnetization of the recording layer (12) can be inverted by having an electrical current oriented in the same direction as the first direction be introduced to the heavy metal layer (11).
Inventors:
FUKAMI SHUNSUKE (JP)
ZHANG CHAOLIANG (JP)
ANEKAWA TETSURO (JP)
OHNO HIDEO (JP)
ENDOH TETSUO (JP)
ZHANG CHAOLIANG (JP)
ANEKAWA TETSURO (JP)
OHNO HIDEO (JP)
ENDOH TETSUO (JP)
Application Number:
PCT/JP2015/071562
Publication Date:
February 11, 2016
Filing Date:
July 29, 2015
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L43/08; H01L21/8246; H01L27/105; H01L29/82; H01L43/10
Domestic Patent References:
| WO2013025994A2 | 2013-02-21 | |||
| WO2012127722A1 | 2012-09-27 | |||
| WO2015068509A1 | 2015-05-14 |
Attorney, Agent or Firm:
KIMURA MITSURU (JP)
Mitsuru Kimura (JP)
Mitsuru Kimura (JP)
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