MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

Title:

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

Document Type and Number:

WIPO Patent Application WO/2016/117664

Kind Code:

A1

Abstract:

A magnetoresistance effect element (10) is provided with the following: a reference layer (12) which is made of a ferromagnetic material, and the direction of magnetization of which is oriented toward a film surface direction; a recording layer (14) which is made of a ferromagnetic material, and the direction of magnetization of which is oriented toward the film surface direction; and a barrier layer (13) that is interposed between the reference layer (12) and the recording layer (14). The film thickness of the recording layer (14), or the length of the short axis of the recording layer (14), is greater than 0.3, and due to this configuration, a performance index of 1.5 µA-1 or greater can be achieved.

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Inventors:

SATO HIDEO (JP)
ISHIKAWA SHINYA (JP)
FUKAMI SHUNSUKE (JP)
IKEDA SHOJI (JP)
MATSUKURA FUMIHIRO (JP)
OHNO HIDEO (JP)
ENDOH TETSUO (JP)

Application Number:

PCT/JP2016/051758

Publication Date:

July 28, 2016

Filing Date:

January 21, 2016

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Assignee:

UNIV TOHOKU (JP)

International Classes:

H01L21/8246; H01L27/105; H01L29/82; H01L43/08

Foreign References:

US20090302403A1	2009-12-10
JP2006108565A	2006-04-20
JP2004165451A	2004-06-10

Attorney, Agent or Firm:

KIMURA MITSURU (JP)
Mitsuru Kimura (JP)

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