Title:
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2018/159015
Kind Code:
A1
Abstract:
This magnetoresistance effect element is provided with: a magnetization fixed layer; a magnetization free layer; and a nonmagnetic spacer layer laminated between the magnetization fixed layer and the magnetization free layer, wherein the magnetization fixed layer has a first fixed layer and a second fixed layer which are made of a ferromagnetic material, and a magnetic coupling layer laminated between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled such that the magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other by exchange-coupling via the magnetic coupling layer, and the magnetic coupling layer is a nonmagnetic layer which includes Ir and at least one of the following elements that are Cr, Mn, Fe, Co, and Ni.
Inventors:
SHIOKAWA YOHEI (JP)
OTA MINORU (JP)
SASAKI TOMOYUKI (JP)
TANAKA YOSHITOMO (JP)
OTA MINORU (JP)
SASAKI TOMOYUKI (JP)
TANAKA YOSHITOMO (JP)
Application Number:
PCT/JP2017/038987
Publication Date:
September 07, 2018
Filing Date:
October 27, 2017
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L43/10; H01L21/8239; H01L27/105; H01L29/82; H01L43/08; H01L43/12
Domestic Patent References:
| WO2016159017A1 | 2016-10-06 |
Foreign References:
| JP2011142326A | 2011-07-21 | |||
| JP2010021580A | 2010-01-28 | |||
| JP2004047583A | 2004-02-12 | |||
| JP2004031544A | 2004-01-29 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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