Title:
MAGNETORESISTANCE EFFECT ELEMENT, STORAGE ELEMENT, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/158323
Kind Code:
A1
Abstract:
Provided is a magnetoresistance effect element comprising a first electrode (10), a fixed magnetic layer (120) in which the magnetization direction is fixed, a first insulating layer (130), a free magnetic layer (140) in which the magnetization direction is variable, a second insulating layer (150), and a second electrode (160) stacked in order, wherein the fixed magnetic layer includes a first magnetic body (121) that is provided on the first electrode and a second magnetic body (123) that is provided on the first magnetic body via a non-magnetic metal layer (122), at least one of the first magnetic body and the second magnetic body is configured by providing a magnetic layer (121B, 123C) immediately above a non-magnetic layer (121A, 123B), and either the non-magnetic layer (123B) or the magnetic layer (121B) has a multilayer structure in which different types of materials are stacked alternately.
Inventors:
KARIYADA EIJI (JP)
Application Number:
PCT/JP2020/000357
Publication Date:
August 06, 2020
Filing Date:
January 08, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01F10/08; H01L43/08; H01F10/26; H01L21/8239; H01L27/105; H01L43/10
Foreign References:
| JP2013069788A | 2013-04-18 | |||
| JP2017505533A | 2017-02-16 | |||
| JP2012160681A | 2012-08-23 | |||
| US20180123025A1 | 2018-05-03 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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