MAGNETORESISTIVE DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2004/030114

A1

A magnetoresistive device utilizing the TMR effect has an improved heat resistance and a weakened Neel effect. The magnetoresistive device comprises a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic insulative tunnel barrier layer deposited on the first ferromagnetic layer, a second ferromagnetic layer made of a ferromagnetic material and deposited the tunnel barrier layer, and an antiferromagnetic layer made of an antiferromagnetic material. The second ferromagnetic layer is arranged between the tunnel barrier layer and the antiferromagnetic layer. A perpendicular extending vertically from an arbitrary point on the surface of the second ferromagnetic layer passes through at least two of the crystal grains which constitute the second ferromagnetic layer.

JPS58215013	MANUFACTURE OF VERTICAL MAGNETIZATION FILM
JPS5750409	READING ELEMENT FOR INFORMATION AND READING METHOD USING SAID ELEMENT
JPH10189322	MAGNETIC THIN FILM

SHIMURA KEN-ICHI (JP)
KAMIJO ATSUSHI (JP)
FUKUMOTO YOSHIYUKI (JP)
MORI KAORU (JP)

PCT/JP2003/011955

April 08, 2004

September 19, 2003

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NEC CORP (JP)
SHIMURA KEN-ICHI (JP)
KAMIJO ATSUSHI (JP)
FUKUMOTO YOSHIYUKI (JP)
MORI KAORU (JP)

H01F10/12; H01F10/30; H01F10/32; G11B5/39; H01F41/18; H01F41/20; H01L43/08; H01L43/12; (IPC1-7): H01L43/08; H01L27/105; G11B5/39

JP2001345493A	2001-12-14
US20020030950A1	2002-03-14
JPH0923031A	1997-01-21
JPH05235435A	1993-09-10
US20020008016A1	2002-01-24

Kudoh, Minoru (6F 24-10, Minamiooi 6-chom, Shinagawa-ku Tokyo, JP)

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