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Title:
MAGNETORESISTIVE EFFECT DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/084007
Kind Code:
A1
Abstract:
A magnetoresistive effect device 100 is characterized in having: an MR unit 20 having an input port 9a, an input-side signal line 7, magnetoresistive effect elements 1a, 1b, and a magnetic field generation signal line 18; and an output unit 21 having magnetoresistive effect elements 14a, 14b, an output-side signal line 17, and an output port 9b; the magnetoresistive effect device 100 further having a DC application terminal 11; the output port 9b and the magnetoresistive effect elements 14a, 14b of the output unit 21 being connected via the output-side signal line 17; the input-side signal line 7 being disposed so that a high-frequency magnetic field generated from the input-side signal line 7 is applied to the magnetoresistive effect elements 1a, 1b of the MR unit 20; the magnetoresistive effect elements 1a, 1b and the magnetic field generation signal line 18 being connected in the MR unit 20; and the magnetic field generation signal line 18 being disposed so that a high-frequency magnetic field generated from the magnetic field generation signal line 18 is applied to the magnetoresistive effect elements 14a, 14b of the output unit 21.

Inventors:
YAMANE TAKEKAZU (JP)
SHIBATA TETSUYA (JP)
SUZUKI TSUYOSHI (JP)
URABE JUNICHIRO (JP)
SHIMURA ATSUSHI (JP)
Application Number:
PCT/JP2017/038106
Publication Date:
May 11, 2018
Filing Date:
October 23, 2017
Export Citation:
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Assignee:
TDK CORP (JP)
International Classes:
H03B15/00; G11B5/39; H01L43/08
Domestic Patent References:
WO2011039843A12011-04-07
Foreign References:
JP2016143701A2016-08-08
JP2009194070A2009-08-27
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