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Patent Searching and Data


Title:
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/159962
Kind Code:
A1
Abstract:
Provided is a perpendicular magnetization type three-terminal SOT-MRAM which does not require an external magnetic field. A magnetoresistive effect element wherein: a first magnetic layer (3), a non-magnetic spacer layer (4) and a recording layer (A1) are sequentially arranged; and the first magnetic layer (3) and the non-magnetic spacer layer (4) are provided in a channel layer (C).

Inventors:
SAITO YOSHIAKI (JP)
IKEDA SHOJI (JP)
SATO HIDEO (JP)
ENDOH TETSUO (JP)
Application Number:
JP2019/005091
Publication Date:
August 22, 2019
Filing Date:
February 13, 2019
Export Citation:
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Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L29/82; G11C11/16; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
WO2016159017A12016-10-06
WO2017208880A12017-12-07
Foreign References:
US20150041934A12015-02-12
Attorney, Agent or Firm:
EICHI PATENT & TRADEMARK CORP. (JP)
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