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Patent Searching and Data


Title:
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/159962
Kind Code:
A1
Abstract:
Provided is a perpendicular magnetization type three-terminal SOT-MRAM which does not require an external magnetic field. A magnetoresistive effect element wherein: a first magnetic layer (3), a non-magnetic spacer layer (4) and a recording layer (A1) are sequentially arranged; and the first magnetic layer (3) and the non-magnetic spacer layer (4) are provided in a channel layer (C).

Inventors:
SAITO Yoshiaki (1-1 Katahira 2-chome, Aoba-ku, Sendai-sh, Miyagi 77, 〒9808577, JP)
IKEDA Shoji (1-1 Katahira 2-chome, Aoba-ku, Sendai-sh, Miyagi 77, 〒9808577, JP)
SATO Hideo (1-1 Katahira 2-chome, Aoba-ku, Sendai-sh, Miyagi 77, 〒9808577, JP)
ENDOH Tetsuo (1-1 Katahira 2-chome, Aoba-ku, Sendai-sh, Miyagi 77, 〒9808577, JP)
Application Number:
JP2019/005091
Publication Date:
August 22, 2019
Filing Date:
February 13, 2019
Export Citation:
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Assignee:
TOHOKU UNIVERSITY (1-1 Katahira 2-chome, Aoba-ku Sendai-sh, Miyagi 77, 〒9808577, JP)
International Classes:
H01L29/82; G11C11/16; H01L21/8239; H01L27/105; H01L43/08
Attorney, Agent or Firm:
EICHI PATENT & TRADEMARK CORP. (45-13, Sengoku 4-chome Bunkyo-k, Tokyo 11, 〒1120011, JP)
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