Title:
MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD AND MAGNETORESISTIVE EFFECT FILM WORKING METHOD
Document Type and Number:
WIPO Patent Application WO/2013/027406
Kind Code:
A1
Abstract:
When using reactive ion etching which uses a gas in which oxygen atoms are included in etching a magnetoresistive effect element, damage is caused by oxidation in a magnetic film. Damage to the element caused by such oxidation causes degradation of element characteristics. When etching a magnetoresistive effect element according to an embodiment of the present invention, ion beam etching is carried out upon a magnetoresistive effect film, with reactive ion etching carried out thereafter. A side deposition formed by the ion beam etching covers a lateral wall of the magnetoresistive effect film, and damage caused by oxygen atoms in the subsequent reactive ion etching is minimized. It is also possible to minimize time in which the element is exposed to plasma of gas in which the oxygen atoms are included.
Inventors:
IKEDA MASAYOSHI (JP)
Application Number:
PCT/JP2012/005286
Publication Date:
February 28, 2013
Filing Date:
August 23, 2012
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
IKEDA MASAYOSHI (JP)
IKEDA MASAYOSHI (JP)
International Classes:
H01L43/12; H01L21/3065; H01L21/8246; H01L27/105; H01L43/08
Foreign References:
| JP2008294420A | 2008-12-04 | |||
| JP2003174215A | 2003-06-20 | |||
| JP2005268349A | 2005-09-29 | |||
| JP2005042143A | 2005-02-17 | |||
| JP2003031772A | 2003-01-31 |
Attorney, Agent or Firm:
OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)
Okabe 讓 (JP)
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Claims: