MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME

WIPO Patent Application WO/2012/004883

A1

Provided is a magnetoresistive effect element showing a low write current density while maintaining a high TMR ratio. A recording layer has a stacked-layer structure of a second ferromagnetic layer, a nonmagnetic layer, and a first ferromagnetic layer. The second ferromagnetic layer contacts an MgO barrier layer and uses a material with a bcc crystal structure such as CoFeB. The first ferromagnetic layer uses a material having a large anisotropy field (Hk⊥) in a vertical direction and satisfying a relationship of 2πMs < Hk⊥ < 4πMs. The first ferromagnetic layer has the magnetization easy axis that lies in plane, but has a high vertical anisotropy field more than a half of a demagnetizing field in a vertical direction. Therefore, an effective demagnetizing field in the vertical direction can be reduced, enabling a write current density to be reduced. A high TMR ratio can also be maintained because the material with the bcc crystal structure contacts the MgO barrier layer.

OHNO HIDEO (JP)
IKEDA SHOJI (JP)
YAMAMOTO HIROYUKI (JP)
ITO KENCHI (JP)
TAKAHASHI HIROMASA (JP)

PCT/JP2010/061669

January 12, 2012

July 09, 2010

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UNIV TOHOKU (JP)
HITACHI LTD (JP)
OHNO HIDEO (JP)
IKEDA SHOJI (JP)
YAMAMOTO HIROYUKI (JP)
ITO KENCHI (JP)
TAKAHASHI HIROMASA (JP)

H01L43/08

WO2007111318A1

2007-10-04

JP2010109372A	2010-05-13
JP2009239120A	2009-10-15
JP2007525847A	2007-09-06
JP2009059432A	2009-03-19
JP2009158789A	2009-07-16
JP2009081216A	2009-04-16
JP2010092527A	2010-04-22

HIRAKI YUSUKE (JP)
Yusuke Hiraki (JP)

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